Tungsten Silicide and Tungsten Polycide Anisotropic Dry Etch Process for Highly Controlled Dimensions and Profiles
Atomic Force Microscopy Study of Self-Assembled Si1-xGex Islands Produced by Controlled Relaxation of Strained Films
Self-assembled Si1−xGex islands were studied in detail using atomic force microscopy. The self-assembled Si1−xGex islands were formed by a novel two-step process. First, highly strained Si1−xGex thin films (with x∼0.4) were selectively grown on a silicon wafer by chemical vapor deposition at 650 °C. The growth was followed by an annealing step perf...
Reduction of Sidewall Defect Induced Leakage Currents by the Use of Nitrided Field Oxides in Silicon Selective Epitaxial...
Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the ...
Stability of Boron And Phosphorus Implanted Tungsten Silicide Structures at HighTemperatures
We report on the stability of sputter-deposited tungsten silicide (WSi2.6) films that were implanted with boron or phosphorus and annealed at high temperatures using rapid thermal annealing. Depending on process conditions, some films were found to be unstable, resulting in peeling and lifting from the substrate. The regime of stability was experim...
SOI Processes For The Fabrication Of Novel Nano-Structures
A process to form a silicon on insulator (SOI) structure suspended in air was demonstrated. The structure provided electrical isolation while providing good thermal contact to the substrate. Selective epitaxial growth (SEG) of silicon was to provide robust, reliable mechanical and electrical contacts between the SOI layer and the substrate. The pro...
Characterization and Modeling of Sidewall Defects in Selective Epitaxial Growth of Silicon
The sidewall defects in selective epitaxial growth (SEG) of silicon were characterized and the nature of these defects was investigated. Electrical characterization of the sidewall defects was performed using diodes fabricated in structures using the SEG of silicon and chemical‐mechanical polishing. Diodes were fabricated with various perimeter to ...
Electrical characterization of microorganisms using microfabricated devices
Characterization of Sidewall Defects in Selective Epitaxial Growth of Silicon
The sidewall defects in high quality selective epitaxial growth (SEG) of silicon were characterized. Three different SEG diode structures were fabricated and the bulk and perimeter defects were characterized through electrical measurements and transmission electron microscopy (TEM). The structures investigated were SEG grown in a 1.2 μm thick wet‐e...
