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Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth

Yen, H Kvam, E Rashid Bashir Neudeck, G

Published in Journal of Materials Science Materials in Electronics

Selective epitaxial growth has been used to produce electronically isolated devices. The oxide/silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a l...

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