Elimination of the Sidewall Defects in Selective Epitaxial Growth (SEG) of Silicon for a Dielectric Isolation Technology...
Published in IEEE Electron Device Letters
Degradation of Insulators in the Silicon Selective Epitaxial Growth Ambient
Published in IEEE Electron Device Letters
The degradation of various insulators in Silicon Selective Epitaxial Growth (SEG) ambient was studied. The insulators studied were thermal oxide, reoxidized nitride/oxide stack, poly-oxide, and nitrided oxide. Breakdown electric fields of MIS capacitors were measured and yields were calculated before and after the insulators were exposed to Silicon...
A Simple Process to Produce High Quality Silicon Surface Prior to Selective Epitaxial Growth
Published in IEEE Electron Device Letters
Characterization and Modeling of Sidewall Defects in Selective Epitaxial Growth of Silicon
The sidewall defects in selective epitaxial growth (SEG) of silicon were characterized and the nature of these defects was investigated. Electrical characterization of the sidewall defects was performed using diodes fabricated in structures using the SEG of silicon and chemical‐mechanical polishing. Diodes were fabricated with various perimeter to ...
Characterization of Sidewall Defects in Selective Epitaxial Growth of Silicon
The sidewall defects in high quality selective epitaxial growth (SEG) of silicon were characterized. Three different SEG diode structures were fabricated and the bulk and perimeter defects were characterized through electrical measurements and transmission electron microscopy (TEM). The structures investigated were SEG grown in a 1.2 μm thick wet‐e...
Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth
Published in Journal of Materials Science Materials in Electronics
Selective epitaxial growth has been used to produce electronically isolated devices. The oxide/silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a l...
A Poly-Silicon Contacted Sub-Collector BJT for a 3-Dimensional BiCMOS Process
Published in IEEE Electron Device Letters
A Technique to Measure the Dynamic Response of a-Si:H Circuits
Published in Microelectronics and Solid State Electronics
Transit Time Studies and Electron Mobility Measurement in Hydrogenated Amorphous Silicon Thin Film Transistor
Published in IEEE Transactions on Electron Devices
