Laboratory of Integrated Biomedical Micro/Nanotechnology & Applications (LIBNA)
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1 News 190 Publications 15 Members

Reduction of Sidewall Defect Induced Leakage Currents by the Use of Nitrided Field Oxides in Silicon Selective Epitaxial...

Rashid Bashir Su, T Sherman, J Neudeck, G Denton, J Obeidat, A

Published in Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the ...

Stability of Boron And Phosphorus Implanted Tungsten Silicide Structures at HighTemperatures

Rashid Bashir Hebert, F

Published in Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

We report on the stability of sputter-deposited tungsten silicide (WSi2.6) films that were implanted with boron or phosphorus and annealed at high temperatures using rapid thermal annealing. Depending on process conditions, some films were found to be unstable, resulting in peeling and lifting from the substrate. The regime of stability was experim...

High Sensitivity Acoustic Transducers with Thin P+ Membrane and Gold Back Plate

Kabir, A Rashid Bashir Bernstein, J De Santis, J Mathews, R O boyle, J Bracken, C

Published in Sensors and Actuators

High sensitivity acoustic transducers (microphones) have been fabricated on 5″ wafers in a production environment and the experimental results are presented. One of the main advantage of this microphone design is that it can be fabricated on a single wafer eliminating the need for the multiple wafers and subsequent wafers bonding steps as in conven...

Phosphorus and Arsenic Dopant Profile Control for High Performance Epitaxial Base Bipolar Junction Devices

Rashid Bashir Kabir, A Westrom, P Rossman, D

Published in Applied Physics Letters

In this study, we report on the incorporation behavior of n-type species in undoped layers grown subsequent to doped layers at low temperature (700–750 °C) reduced pressure chemical vapor deposition of silicon/silicon germanium (Si/Si1−xGex) performed in a single wafer epitaxial deposition system. Significant amounts of these species are observed e...

Formation of Self-Assembled Si1-xGex Islands Using Reduced Pressure Chemical Vapor Deposition and Subsequent Thermal Ann...

Rashid Bashir A Kabir K Chao

Published in Applied Surface Science

Back Gated Buried Oxide MOSFETs in a High Voltage Bipolar Technology for Bonded Oxide/SOI Interface Characterization

Rashid Bashir F Wang W Yindepool J De Santis J Mcgregor

Published in IEEE Electron Device Letters

Tungsten Silicide and Tungsten Polycide Anisotropic Dry Etch Process for Highly Controlled Dimensions and Profiles

Rashid Bashir Kabir, A Hebert, F Bracken, C

Published in Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Measurements and Comparison of Low Frequency Noise in NPN and PNP Polysilicon Emitter Bipolar Junction Transistors

Deen, M Rumyantsev, S Rashid Bashir Taylor, R

Published in International Journal of Applied Physics and Mathematics

Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the o...

Doping of Poly-crystalline Silicon Films Using an Arsenic Spin-on-Dopant Source

Rashid Bashir Venkatesan, S Yen, H Neudeck, G Kvam, E

Published in Journal of Vaccum Science and Technology-B

In this brief, the doping of polycrystalline silicon from a commercially available arsenic spin‐on glass (SOG) source is described for the first time. It is shown that the arsenic SOG source provides low sheet resistivities in thin polycrystalline silicon films which can be used as gates and contacts. In addition, the polycrystalline silicon films ...

PLATOP-A Novel Planarized Trench Isolation and Field Oxide Formation Using Poly-Silicon

Rashid Bashir F Hebert

Published in IEEE Electron Device Letters

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