Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the ...
We report on the stability of sputter-deposited tungsten silicide (WSi2.6) films that were implanted with boron or phosphorus and annealed at high temperatures using rapid thermal annealing. Depending on process conditions, some films were found to be unstable, resulting in peeling and lifting from the substrate. The regime of stability was experim...
Published in Sensors and Actuators
High sensitivity acoustic transducers (microphones) have been fabricated on 5″ wafers in a production environment and the experimental results are presented. One of the main advantage of this microphone design is that it can be fabricated on a single wafer eliminating the need for the multiple wafers and subsequent wafers bonding steps as in conven...
Published in Applied Physics Letters
In this study, we report on the incorporation behavior of n-type species in undoped layers grown subsequent to doped layers at low temperature (700–750 °C) reduced pressure chemical vapor deposition of silicon/silicon germanium (Si/Si1−xGex) performed in a single wafer epitaxial deposition system. Significant amounts of these species are observed e...
Published in Applied Surface Science
Published in IEEE Electron Device Letters
Published in International Journal of Applied Physics and Mathematics
Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the o...
Published in Journal of Vaccum Science and Technology-B
In this brief, the doping of polycrystalline silicon from a commercially available arsenic spin‐on glass (SOG) source is described for the first time. It is shown that the arsenic SOG source provides low sheet resistivities in thin polycrystalline silicon films which can be used as gates and contacts. In addition, the polycrystalline silicon films ...
Published in IEEE Electron Device Letters
